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Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions
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10.1063/1.2767230
/content/aip/journal/apl/91/5/10.1063/1.2767230
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767230
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic view of the device and microscope image of the channel region of the device. (b) Setup for TMR measurement. (c) TMR of MTJ-A measured at several temperatures between 50 and .

Image of FIG. 2.
FIG. 2.

(Color online) Detection of field-induced DW motion. (a) TMR of MTJ-A and -B at as a function time. corresponds to the time at which is changed from positive value to . (b) Magnetic domain structure monitored by MOKE microscope. The number corresponds to the number in (a) to indicate the time at which the image was taken.

Image of FIG. 3.
FIG. 3.

(Color online) Detection of current-induced DW motion. (a) TMR of MTJ-A and -B at , where arrows indicate current pulse sequence. (b) Corresponding MOKE images.

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/content/aip/journal/apl/91/5/10.1063/1.2767230
2007-07-30
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767230
10.1063/1.2767230
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