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Influence of anthracene-2-thiol treatment on the device parameters of pentacene bottom-contact transistors
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10.1063/1.2767235
/content/aip/journal/apl/91/5/10.1063/1.2767235
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767235
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Top-view scanning electron micrographs of bottom-contact transistor structures with a channel length of for untreated electrodes [(a) and (c)] and AnT-treated electrodes [(b) and (d)] after the deposition of a [(a) and (b)] -thick and [(c) and (d)] -thick pentacene film.

Image of FIG. 2.
FIG. 2.

(Color online) Output characteristic and the square root of the absolute drain current as a function of of an untreated (black) and an AnT-treated (red) transistor with a channel length of .

Image of FIG. 3.
FIG. 3.

Width-normalized device resistance as a function of channel length for transistors with (a) untreated and (b) AnT-treated electrodes.

Image of FIG. 4.
FIG. 4.

Sheet resistance and width-normalized parasitic resistance of the untreated (●) and AnT-treated (◻) sample as a function of gate voltage as derived from Fig. 3.

Image of FIG. 5.
FIG. 5.

Temperature dependence of the mobility for an untreated (●) and an AnT-treated (◻) transistor.

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/content/aip/journal/apl/91/5/10.1063/1.2767235
2007-08-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of anthracene-2-thiol treatment on the device parameters of pentacene bottom-contact transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767235
10.1063/1.2767235
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