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Top-view scanning electron micrographs of bottom-contact transistor structures with a channel length of for untreated electrodes [(a) and (c)] and AnT-treated electrodes [(b) and (d)] after the deposition of a [(a) and (b)] -thick and [(c) and (d)] -thick pentacene film.
(Color online) Output characteristic and the square root of the absolute drain current as a function of of an untreated (black) and an AnT-treated (red) transistor with a channel length of .
Width-normalized device resistance as a function of channel length for transistors with (a) untreated and (b) AnT-treated electrodes.
Sheet resistance and width-normalized parasitic resistance of the untreated (●) and AnT-treated (◻) sample as a function of gate voltage as derived from Fig. 3.
Temperature dependence of the mobility for an untreated (●) and an AnT-treated (◻) transistor.
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