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Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on substrates
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10.1063/1.2767239
/content/aip/journal/apl/91/5/10.1063/1.2767239
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767239
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Figures

Image of FIG. 1.
FIG. 1.

Schematic showing the UV excitation of one PE-GaN stripe and the resultant photoluminescence emanating from the sidewalls.

Image of FIG. 2.
FIG. 2.

SEM micrographs of (a) the cross section of one and (b) the plan-view of four uncoalesced PE-GaN stripe(s). The width and thickness of each stripe are 13.3 and , respectively. The sidewalls of the stripes are flat and mirrorlike.

Image of FIG. 3.
FIG. 3.

Spectra of Phonon-assisted stimulated emission with Fabry-Pérot modes from a wide PE-GaN stripe acquired at using UV excitation power densities of (a) , (b) , and (a) . Inset shows enlargement of the spectrum (a). The mode spacing is estimated to be at the center wavelength of .

Image of FIG. 4.
FIG. 4.

(a) TE- and (b) TM-polarized emission spectra acquired at using UV excitation power density of . Phonon-assisted stimulated emission was only observed in the TE-polarization spectrum.

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/content/aip/journal/apl/91/5/10.1063/1.2767239
2007-08-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767239
10.1063/1.2767239
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