1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Silicon nanocrystal-based photosensor on low-temperature polycrystalline-silicon panels
Rent:
Rent this article for
USD
10.1063/1.2767241
/content/aip/journal/apl/91/5/10.1063/1.2767241
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767241
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross-sectional view of the proposed silicon nanocrystal photosensor; the photosensing area is stacked above the pixel circuits. Electron-hole pairs are generated in the nanocrystal layer by photoexcitation. (b) Silicon nanocrystals are formed by laser annealing of silicon-rich oxide film deposited with PECVD on top of the metal layer. (c) Traditional photodiode in LTPS technology fabricated by chemical vapor deposition of films, excimer laser crystallization of LTPS, and ion implantation of and dopants.

Image of FIG. 2.
FIG. 2.

(a) TEM images of silicon nanocrystals with 5 and in diameter, respectively. (b) Distribution of crystal size in the sample with refractive index of 1.8.

Image of FIG. 3.
FIG. 3.

(Color online) Light absorption spectrum of samples with silicon nanocrystal layers of 100, 200, and monochromatically illuminated by a constant optical power of and a bias voltage of . The wavelength that corresponds to the peak photocurrent intensity shifts to green light as the sample thickness changes from .

Image of FIG. 4.
FIG. 4.

(Color online) Light absorption spectrum of silicon nanocrystal devices with , 1.8, 2.0, and 2.3, and that of a device monochromatically illuminated by a constant optical power of and a bias voltage of . The peak response of is at a wavelength of , and that of is at . The peak responses of and are at and at , respectively. The peak value of the diode is at a wavelength of .

Image of FIG. 5.
FIG. 5.

(Color online) Dark current and sensitivity of nanocrystal sensors underwent different laser annealing energies. The refractive index of silicon-rich oxide film is 1.8 with a thickness of . The samples are illuminated by a full spectrum visible light with a bias voltage.

Loading

Article metrics loading...

/content/aip/journal/apl/91/5/10.1063/1.2767241
2007-08-02
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon nanocrystal-based photosensor on low-temperature polycrystalline-silicon panels
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767241
10.1063/1.2767241
SEARCH_EXPAND_ITEM