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(Color online) (a) Cross-sectional view of the proposed silicon nanocrystal photosensor; the photosensing area is stacked above the pixel circuits. Electron-hole pairs are generated in the nanocrystal layer by photoexcitation. (b) Silicon nanocrystals are formed by laser annealing of silicon-rich oxide film deposited with PECVD on top of the metal layer. (c) Traditional photodiode in LTPS technology fabricated by chemical vapor deposition of films, excimer laser crystallization of LTPS, and ion implantation of and dopants.
(a) TEM images of silicon nanocrystals with 5 and in diameter, respectively. (b) Distribution of crystal size in the sample with refractive index of 1.8.
(Color online) Light absorption spectrum of samples with silicon nanocrystal layers of 100, 200, and monochromatically illuminated by a constant optical power of and a bias voltage of . The wavelength that corresponds to the peak photocurrent intensity shifts to green light as the sample thickness changes from .
(Color online) Light absorption spectrum of silicon nanocrystal devices with , 1.8, 2.0, and 2.3, and that of a device monochromatically illuminated by a constant optical power of and a bias voltage of . The peak response of is at a wavelength of , and that of is at . The peak responses of and are at and at , respectively. The peak value of the diode is at a wavelength of .
(Color online) Dark current and sensitivity of nanocrystal sensors underwent different laser annealing energies. The refractive index of silicon-rich oxide film is 1.8 with a thickness of . The samples are illuminated by a full spectrum visible light with a bias voltage.
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