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Combined Raman study of InGaAsN from the N-impurity and InGaAs-matrix sides
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10.1063/1.2767244
/content/aip/journal/apl/91/5/10.1063/1.2767244
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767244
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Figures

Image of FIG. 1.
FIG. 1.

(a) N-related LO spectrum recorded on the thin InGaAsN layer. The ZC-DOS calculated for N (thick lines), Ga (thin lines), and In (dashed lines) with GaAs-based supercells containing (b) one isolated N atom, (c) one isolated In–N bond, and (d) two connected Ga–N bonds are shown for comparison. The vibration pattern is indicated for each mode.

Image of FIG. 2.
FIG. 2.

InGaAs-related TO (with polarized setup 1: TO activated, : TO extinct) and LO (2) spectra recorded on the thick InGaAsN layer. The theoretical TO and LO individual modes are shown as downward shifted thin lines. The resulting TO Ga–As band and mode are superimposed to the spectra as thick lines. The TO and LO sets for random InGaAs are added as dotted lines, for comparison. The effect of the transfer of oscillator strength on the individual TO and LO modes is indicated by the vertical and curved antagonist arrows, respectively. The dependence of the frequency on at In is shown in the inset. The star marks a laser line.

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/content/aip/journal/apl/91/5/10.1063/1.2767244
2007-08-01
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Combined Raman study of InGaAsN from the N-impurity and InGaAs-matrix sides
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767244
10.1063/1.2767244
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