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Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature
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10.1063/1.2767765
/content/aip/journal/apl/91/5/10.1063/1.2767765
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767765
/content/aip/journal/apl/91/5/10.1063/1.2767765
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/content/aip/journal/apl/91/5/10.1063/1.2767765
2007-08-02
2014-08-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767765
10.1063/1.2767765
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