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Calculated conduction band profile under applied bias, and the moduli squared of the relevant wave functions are shown for two active regions and one injector for QCL (wafer A). The layer thicknesses (in nanometers) starting from the injection barrier for one period of active and injector regions are as follows: . The layers (barriers) are in bold font, the AlAs barriers are in bold font and in the parentheses, the wells are in Roman font, and the underlined layers are Si doped to . The lasing transition is indicated by the arrow.
Normalized laser (thick lines) and electroluminescence spectra at 80 and for the lasers from two wafers taken at and . FWHMs are 25 and at and 55 and at for wafers A and B, respectively. The absorption caused by atmospheric is indicated by the arrow.
Typical threshold current density dependence on the heat sink temperature for the lasers from wafer A with AlAs barriers in the active region and reference wafer B with barriers throughout whole the structure.
Voltage-current and temperature dependent light-current characteristics for QCL (wafer A) with the ridge size of .
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