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Modified atomic layer deposition of thin films for capacitor electrodes
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10.1063/1.2767769
/content/aip/journal/apl/91/5/10.1063/1.2767769
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767769
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of (a) modified ALD and (b) conventional ALD sequence.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dependence of the film thickness per cycle on pulse time, deposited by conventional ALD and modified ALD. One cycle consisted source pulse, purge pulse, oxygen pulse, and another purge pulse of . (b) Diffraction patterns by XRD.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Dependence of film thickness on the number of deposition cycles. (b) The amount of deposited Ru atoms as a function of deposition cycles, determined by XRR.

Image of FIG. 4.
FIG. 4.

(Color online) Step coverage of Ru and films deposited by ALD and modified ALD, respectively, at (a) top, (b) center, and (c) bottom of circle type concave hole. To separate each layer explicitly in the TEM images, -thick ALD layer is inserted between ALD Ru and modified ALD layers.

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/content/aip/journal/apl/91/5/10.1063/1.2767769
2007-08-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modified atomic layer deposition of RuO2 thin films for capacitor electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767769
10.1063/1.2767769
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