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Schematic illustration of spin-valve device with transparent top electrode, and experimental setup. The plain arrow in the free layer indicates the direction of the magnetization. The device includes the bottom electrode of , the pinned layer of , an intermediate layer of Cu(6), and the free layer with capping of , all in nanometers.
(Color online) (a) Optical microscopy image of CPP-spin-valve device. Center dot indicates laser spot for MOKE detection. (b) Atomic force microscopy image of three spin-valve elements. Rectangles indicated by the dashed line show the spin-valve elements, each of which is . The device is including the space between the horizontal lines.
(Color online) Device resistance as a function of lateral size of the devices with the top electrode of the IZO of , and Cu of 10 and thickness.
(a) STS and the (b) Kerr ellipticity characteristics for three spin-valve elements. Open circles in (a) indicate resistance as a function of the applied current of with an increment of . (b) The changes are defined as in Kerr ellipticity for various applied currents of , , , and . Kerr measurements are synchronized with resistance measurements [solid squares in (a)]. Averaged values over 60 points at each four different currents are plotted with error bars of standard deviation.
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