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Predicted variation of as a function of temperature and carrier lifetime with a nickel-63 source for diode. (a) , ; (b) , ; (c) , ; (d) , ; (e) , ; and (f) , . (g) Betavoltaic circuit diagram used in the predictions. The shunt resistance was considered to be large and was ignored in the predictions in this figure. (h) Schematic illustration of measurement geometry for diode under nickel-63 illumination.
(a). Arrhenius plot of leakage current density at elevated temperatures. (b) vs voltage at various temperatures showing relatively constant built-in voltage, consistent with SiC.
(a) Measured characteristics of diode under nickel-63 illumination as a function of temperature. The extracted shunt resistance is indicated on the graph and was found to be temperature invariant. (b) Comparison of measured and modeled temperature dependences of with and without the shunt resistance.
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