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Dingle temperatures for a two-band model: Application to the two-dimensional electron gas on silicon (111)
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10.1063/1.2767982
/content/aip/journal/apl/91/5/10.1063/1.2767982
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767982
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Screening function vs wave number for the two-band model of silicon (111) with and as the solid line. is the screening wave number of the two-dimensional electron gas with , where is the effective Bohr radius. The contribution of band (1) with (dotted line) and of band (2) with (dashed line) to (the solid line) are also shown.

Image of FIG. 2.
FIG. 2.

Dingle temperature vs total electron density . The solid lines correspond to the two-band model ( model) for band (1) and band (2) with . The dashed-dotted line represents the one-band model with and .

Image of FIG. 3.
FIG. 3.

Effective mobility vs total electron density . The solid line corresponds to the two-band model with . The dashed-dotted line represents the one-band model with and . The solid dot represents an experimental result of Ref. 13 measured at . The dotted line represents the completely spin-polarized electron gas with .

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/content/aip/journal/apl/91/5/10.1063/1.2767982
2007-08-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dingle temperatures for a two-band model: Application to the two-dimensional electron gas on silicon (111)
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767982
10.1063/1.2767982
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