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Nitrogen related shallow thermal donors in silicon
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10.1063/1.2767989
/content/aip/journal/apl/91/5/10.1063/1.2767989
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767989

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Ground state configuration of the neutral NO (left) and (right) defects situated in one of the ⟨110⟩ planes of the diamond lattice.

Image of FIG. 2.
FIG. 2.

(Color online) N and N–O defect concentrations as a function of the temperature in nitrogen-doped Cz Si. (a) ; . (b) ; .

Image of FIG. 3.
FIG. 3.

(Color online) Ratio of at 700 and in dependence of the total nitrogen concentration. The oxygen concentration is set to .

Tables

Generic image for table
Table I.

Binding energies (in eV) of nitrogen and nitrogen-oxygen complexes formed by the reactions shown in the left column.

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/content/aip/journal/apl/91/5/10.1063/1.2767989
2007-08-01
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitrogen related shallow thermal donors in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767989
10.1063/1.2767989
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