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(Color online) Ground state configuration of the neutral NO (left) and (right) defects situated in one of the ⟨110⟩ planes of the diamond lattice.
(Color online) N and N–O defect concentrations as a function of the temperature in nitrogen-doped Cz Si. (a) ; . (b) ; .
(Color online) Ratio of at 700 and in dependence of the total nitrogen concentration. The oxygen concentration is set to .
Binding energies (in eV) of nitrogen and nitrogen-oxygen complexes formed by the reactions shown in the left column.
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