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Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition
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10.1063/1.2767992
/content/aip/journal/apl/91/5/10.1063/1.2767992
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767992
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Infrared PL spectra taken at from GaN epilayers having Er concentrations in the range of . PL from an undoped control sample is also shown.

Image of FIG. 2.
FIG. 2.

(a) PL spectra at indicted temperatures taken from the epilayer having an Er concentration of ; (b) Thermal quenching of the integrated PL intensity for samples with of and .

Image of FIG. 3.
FIG. 3.

SQUID measurements as a function of temperature from GaN epilayer with an Er concentration of , in an applied field of . Field-cooled and zero-field-cooled magnetization data points are shown.

Image of FIG. 4.
FIG. 4.

Plots of the measured integrated PL intensity at (top panel) and the saturation magnetization (bottom panel) vs Er concentration.

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/content/aip/journal/apl/91/5/10.1063/1.2767992
2007-08-01
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/5/10.1063/1.2767992
10.1063/1.2767992
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