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Fabrication of nanoscale single crystal InP membranes
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Membrane fabrication process flow. (a) The layer structure from the bottom to the top: (i) InP (100) wafer (light yellow), (ii) thick sacrificial layer (green), (iii) thick membrane layer (red), (iv) thick etch stop layer (green), (v) thick InP support layer (yellow), and (vi) capping layer (green). (b) Pattern transfer onto layer. (c) Etch through mask down to the InGaAs sacrificial layer by ECR-RIE. (d) layer is removed and (e) subsequently regrown conformally. Membrane structure: (f) membrane pattern transfer onto either by optical or e-beam lithography followed by selective wet etch to the etch stop layer. Release: (g) the protective layer is stripped and (h) the entire structure is released by wet chemical etching.

Image of FIG. 2.
FIG. 2.

(Color online) Top view optical micrograph of the cross bridge support structure with a thick, diameter circular membrane in the center (a) before and (b) after the final release. (c) Top view FESEM micrograph of the same structure acquired at , in secondary electron detection mode. (d) A zoomed in topographic image obtained by backscattered electron imaging.

Image of FIG. 3.
FIG. 3.

(Color online) FESEM micrographs at 45° tilt of the square membrane devices: (a) overview of a membrane structure with a rupture in the membrane layer in the area indicated, (b) a zoomed in view of the same membrane, (c) defect-free membrane structure, and (d) a zoomed in view of the same membrane.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of nanoscale single crystal InP membranes