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Effective barrier height vs ideality factor for the best reported Schottky contacts on -type ZnO.
Variable angle XPS of the O 1s core level on the Zn-polar and O-polar faces of hydrothermal bulk ZnO, for takeoff angles of 90° and 15°, after TMAH treatment , DI rinsing, and drying with .
Typical characteristics and effective barrier height vs ideality factor plots, measured at RT, for silver oxide diodes on hydrothermal and melt bulk ZnO.
Typical characteristics and effective donor concentration depth profiles, measured at RT, for silver oxide diodes on hydrothermal and melt bulk ZnO.
Electrical characterization of hydrothermal and melt grown ZnO wafers from single field Hall effect measurements at RT [carrier concentration , mobility , and resistivity ].
Characteristics of the best silver oxide diodes on hydrothermal and melt bulk ZnO wafers from and measurements at RT, and calculated image force lowering and tunneling parameters [ideality factor , barrier height , built in potential , barrier height , effective donor density , image force lowering of , image force controlled ideality factor , laterally homogeneous barrier height , tunneling parameter , and TFE controlled ideality factor ].
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