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Valence band anticrossing in
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Image of FIG. 1.
FIG. 1.

(Color online) Dispersion relation of the valence band, containing the heavy-hole (HH), light-hole (LH), and spin-orbit split-off (SO) and subbands.

Image of FIG. 2.
FIG. 2.

(Color online) Photomodulated reflectance spectra of several films ranging in composition . Each spectrum contains features associated with the band gap and spin-orbit split-off to conduction band optical transitions in the GaAs capping layer, while those films with compositions also exhibit transitions related to the heavy and light hole to conduction band transitions and spin-orbit split-off to conduction band transitions in the film.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Experimental and transition energies measured by PR along with the dependencies predicted by the VBAC model. (b) VBAC-determined composition dependence of the valence band edge positions. (c) Measured and theoretically predicted composition dependence of the band gap and spin-orbit splitting energies in . The symbols refer to the same data presented in (a).


Generic image for table
Table I.

Energies and broadening parameters used to fit the band gap and spin-orbit split-off band to conduction band transitions in the PR spectra shown in Fig. 2 . Also displayed is the spin-orbit splitting energy for each composition.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Valence band anticrossing in GaBixAs1−x