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Schematic structure of all the samples (a) and detailed parameters of active layer for AS-QW (b), CS-WQW (c), and CS-NQW (d).
PL spectra for the AS-QW (a) and the CS-QW (b) at temperatures of 15 and .
Temperature dependences of integrated PL intensity for the AS-QW (a) and CS-QW (b). The inserts show the temperature dependent spectra of AS-QW and CS-QW, respectively.
Conduction band edge of the AS-QW. and represent, respectively, the ground state energy level (electron density) and a certain excited state energy level (electron density) of the AS-WQW, as well as and for the AS-NQW.
Temperature dependences of integrated PL intensity of the AS-NQW at varied excitation powers of 50 (a), 9.3 (b), 6.7 (c), 4.5 (d), 2.4 (e), 1.7 (f), 0.9 (g), 0.5 (h), and (i), respectively.
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