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Role of optical gain broadening in the broadband semiconductor quantum-dot laser
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10.1063/1.2762287
/content/aip/journal/apl/91/6/10.1063/1.2762287
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2762287
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) The calculated and predicted lasing spectra for two systems with different inhomogeneous broadening are shown in the figure as a function of current injection. The continuous line in figure shows (a) ground-state lasing; (b) two-state lasing; and (c) excited-state lasing for low inhomogeneous broadening system, while the dotted line shows the broad lasing line of high inhomogeneous broadening system. The change of homogeneous broadening effect of both GS and ES in the highly inhomogeneous system results in broadband lasing emission as shown in (d), (e), and (f). The homogeneous broadening of the ground state and excited state were optimized in order to explain the measured lasing spectra.

Image of FIG. 2.
FIG. 2.

(Color online) Comparison of ultrabroadband lasing spectra between the experimental data and theoretical model as a function of current injection is shown. Both insets show the linewidth of lasing spectra under different levels of injection.

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/content/aip/journal/apl/91/6/10.1063/1.2762287
2007-08-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of optical gain broadening in the broadband semiconductor quantum-dot laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2762287
10.1063/1.2762287
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