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scans of (0 0 0 2) reflection from MQWs on bulk GaN substrates (black lines) and simulations for laterally homogeneous layers (gray lines). [(a) and (b)] Whole scans in the logarithmic scale; [(c) and (d)] the parts of (a) and (b), respectively, in linear scale.
Scheme of microscopic model of simulated virtual sample. The white squares are GaN unit cells, light gray rectangles—unit cells of InGaN with lower In content, and dark gray rectangles—unit cells of InGaN with higher In content.
Same measured curves as in Fig. 1 (black lines) and simulations with lateral segregation of indium in InGaN wells. The In content fluctuation amplitude is 3.2% (a) and 8% (b)—solid gray lines; to compare, curves with a higher amplitude of fluctuation are shown: 4.8% (a) and 12% (b)—dashed gray lines.
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