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Quantification of In clustering in multi-quantum-wells by analysis of x-ray diffraction data
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10.1063/1.2764112
/content/aip/journal/apl/91/6/10.1063/1.2764112
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2764112
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Figures

Image of FIG. 1.
FIG. 1.

scans of (0 0 0 2) reflection from MQWs on bulk GaN substrates (black lines) and simulations for laterally homogeneous layers (gray lines). [(a) and (b)] Whole scans in the logarithmic scale; [(c) and (d)] the parts of (a) and (b), respectively, in linear scale.

Image of FIG. 2.
FIG. 2.

Scheme of microscopic model of simulated virtual sample. The white squares are GaN unit cells, light gray rectangles—unit cells of InGaN with lower In content, and dark gray rectangles—unit cells of InGaN with higher In content.

Image of FIG. 3.
FIG. 3.

Same measured curves as in Fig. 1 (black lines) and simulations with lateral segregation of indium in InGaN wells. The In content fluctuation amplitude is 3.2% (a) and 8% (b)—solid gray lines; to compare, curves with a higher amplitude of fluctuation are shown: 4.8% (a) and 12% (b)—dashed gray lines.

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/content/aip/journal/apl/91/6/10.1063/1.2764112
2007-08-09
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantification of In clustering in InGaN∕GaN multi-quantum-wells by analysis of x-ray diffraction data
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2764112
10.1063/1.2764112
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