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Dispersion relations of (a) the optical constants and for GaN, (b) probing depth of the probe light, and (c) calculated phase shift due to the Seraphin constants.
(a) Estimated field distribution and band profile for the representative GaN film based on the results of KFM and -Raman analyses,6 and (b) the schematic illustrations of the modulation mechanisms of PR (upper half) and CER (lower half) for both and GaN faces where the dotted and solid curves represent the initial and modulated band profiles, respectively.
(a) Comparison between the PR and CER spectra and (b) the results of least-squares fitting analysis of CER spectral line shape of GaN films.
Lattice polarities, growth conditions, thicknesses, and parameters obtained by fitting analysis of CER spectral shapes for the GaN samples.
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