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XPS Ga and As spectra of GaAs surface (a) before and [(b) and (c)] After deposition using and , respectively. It is evident that are removed upon deposition.
(a) HFCV characteristics of chemically treated -type GaAs measured at . The inset demonstrates quasi static behavior of -treated samples. (b) Leakage current density vs. voltage for both chemical treatment techniques. The effect of different PDA conditions on hysteresis is shown in the inset.
(a) Capacitance equivalent thickness (CET) vs physical thickness. The -treated capacitors exhibit slightly smaller CETs than the -treated ones. (b) The leakage current density measured on MOS structures with different thicknesses. The inset illustrates FN plot for a MOS structure with -thick .
Frequency dispersion characteristics of (a) - and (b) -treated samples, where the flatband voltages at different frequencies are depicted as an inset in (a). The statistical study of process variation on frequency dispersion behavior corroborates the reproducibility of these chemical processes [the inset of (b)].
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