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SEM cross-sectional images of dry-etched ridges after wet thermal oxidation for at in (a) conventional and (b) -enhanced ( ratio) gas ambient. Insets: high-magnification SEM images showing the semiconductor/oxide interface roughness after oxidation. Sidewall roughness is reduced up to 100 fold in (b) relative to (a).
Top-view ( plane) SEM images of oxide/semiconductor interface resulting after wet oxidation (a) without and (b) with added , showing 10–20 times roughness reduction along an etched ridge. The encapsulant layer serves to preserve the original outer oxide/air interface during polishing.
SEM images of dry-etched ridge structure (a) before oxidation, (b) after , -enhanced wet oxidation ( ), and (c) after selective oxide removal in 1:10 solution for to reveal oxidation-smoothed interface.
SEM images of shallow dry-etched ridge structures wet oxidized at for (a) without and (b) with added , shown after selective oxide removal in 1:10 for . The inset shows tall ridge structure formed via RIE before oxidation. Image (a) demonstrates the absence of smoothing in the BHF solution.
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