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Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the as source/drain metal
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10.1063/1.2767147
/content/aip/journal/apl/91/6/10.1063/1.2767147
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2767147

Figures

Image of FIG. 1.
FIG. 1.

Detailed process flow of the proposed island-in TFT with the source/drain and a back-channel-etched (BCE) inverted-staggered TFT structure.

Image of FIG. 2.
FIG. 2.

SEM cross-sectional image of the island-in TFT with source/drain metal after a completed TFT manufacture process. The inset shows surface profile of OM picture.

Image of FIG. 3.
FIG. 3.

(a) Transfer characteristics ( curve) of the island-in TFT with source/drain after the , annealing process in the vacuum chamber. The channel length and width are 16 and , respectively. (b) The output characteristics ( curve) of the island-in TFT with source/drain after the , annealing process in the vacuum chamber.

Tables

Generic image for table
Table I.

Adhesion and resistivity of metal on layer.

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/content/aip/journal/apl/91/6/10.1063/1.2767147
2007-08-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2767147
10.1063/1.2767147
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