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(Color online) Schematic diagrams of (a) SSWCNT-embedded transistor and (b) LSWCNT-embedded transistor used in this study, and typical tapping mode AFM height images of (c) SWCNTs perpendicularly linked to a silicon oxide surface used as a tunneling dielectric and (d) the lying-down SWCNTs on the silicon oxide surface.
Electrical memory characteristics. Double-swept hysteresis of a vertically SSWCNT device (a) and a LSWCNT device (b) at room temperature.
Program/erase transient characteristics of the SSWCNT devices and LSWCNT devices . Pulses of and were applied for the program/erase operations.
Retention time characteristics of the SSWCNT devices and LSWCNT devices measured at room temperature.
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