1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Vertically standing carbon nanotubes as charge storage nodes for an ultimately scaled nonvolatile memory application
Rent:
Rent this article for
USD
10.1063/1.2767211
/content/aip/journal/apl/91/6/10.1063/1.2767211
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2767211
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagrams of (a) SSWCNT-embedded transistor and (b) LSWCNT-embedded transistor used in this study, and typical tapping mode AFM height images of (c) SWCNTs perpendicularly linked to a silicon oxide surface used as a tunneling dielectric and (d) the lying-down SWCNTs on the silicon oxide surface.

Image of FIG. 2.
FIG. 2.

Electrical memory characteristics. Double-swept hysteresis of a vertically SSWCNT device (a) and a LSWCNT device (b) at room temperature.

Image of FIG. 3.
FIG. 3.

Program/erase transient characteristics of the SSWCNT devices and LSWCNT devices . Pulses of and were applied for the program/erase operations.

Image of FIG. 4.
FIG. 4.

Retention time characteristics of the SSWCNT devices and LSWCNT devices measured at room temperature.

Loading

Article metrics loading...

/content/aip/journal/apl/91/6/10.1063/1.2767211
2007-08-07
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertically standing carbon nanotubes as charge storage nodes for an ultimately scaled nonvolatile memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2767211
10.1063/1.2767211
SEARCH_EXPAND_ITEM