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Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors
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10.1063/1.2767779
/content/aip/journal/apl/91/6/10.1063/1.2767779
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2767779
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic structure of the fabricated top-contact pentacene TFTs with plasma treatment. (b) Long scan x-ray photoelectron spectrum of PVP layer before and after plasma treatment.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Leakage current density of hybrid gate dielectrics treated at various plasma powers. (b) AES depth profiles identifying fluorine incorporation in hybrid gate dielectrics after plasma treatment. (c) AFM images of PVP layers treated at various plasma powers.

Image of FIG. 3.
FIG. 3.

(Color online) AFM images and height profiles of the pentacene films deposited on (a) bare PVP layer and (b) plasma treated PVP layer, and pentacene films deposited on (c) bare PVP layer and (d) plasma treated PVP layer.

Image of FIG. 4.
FIG. 4.

(Color online) curves at various obtained from pentacene TFTs fabricated on (a) bare hybrid gate dielectrics and (b) plasma treated hybrid gate dielectrics. (c) and (d) curves for the estimation of saturation regime mobility that were obtained at from TFTs with pentacene TFTs fabricated on hybrid gate dielectrics before and after plasma treatment.

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/content/aip/journal/apl/91/6/10.1063/1.2767779
2007-08-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2767779
10.1063/1.2767779
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