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Schematic representation of the setup used for current-sensing AFM (CS-AFM) in jumping mode (JM). Simultaneous images of topography, dc current , ac resistance , and capacitance can be obtained with almost no lateral shear forces.
Simultaneous topographic (a) and dc current (b) images of a PM patch on a gold substrate measured by dc CS-AFM in jumping mode with applied bias. Profiles of (c) topography and (d) direct current corresponding to the dashed lines in the images are also shown. The PM patch is formed by an thick monolayer which is double folded in some regions .
Simultaneous (a) topographic and (b) capacitance images of a PM membrane step [marked area in Fig. 2(a)] measured by ac CS-AFM in jumping mode. Profiles of (c) topography and (d) capacitance (squares) corresponding to the dashed line in the images are also shown. The theoretical capacitance profile calculated with a thickness of is shown in (d) (solid thick line), showing excellent agreement with observed data. The stray capacitance contribution (solid thin line) is shown to be negligible.
(a) Topographic image of three partially overlapping PM monolayers. (b) Capacitance distance curve taken on the gold surface close to the PM patch (symbols) used to calibrate the stray capacitance (thin solid line) and the effective electrical radius of the tip apex (thick solid line). Averaged (c) topographic and (d) capacitance profiles taken along the dashed line in (a). In (d) symbols represent the measurements, the solid line the theoretical expectation for a thickness of and the thin solid line the stray capacitance contribution (below ).
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