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Low temperature photodiodes and flexible image sensor arrays patterned by digital lithography
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10.1063/1.2767981
/content/aip/journal/apl/91/6/10.1063/1.2767981
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2767981

Figures

Image of FIG. 1.
FIG. 1.

Dark current density vs applied electric field for sensors processed at different temperatures. Each Roman numeral in the legend corresponds to a specific sensor in Table I.

Image of FIG. 2.
FIG. 2.

(a) Photocurrent vs incident light power at a wavelength of . The solid lines have . (b) External quantum efficiency vs applied electric field. The solid lines are fits to Eq. (1). Each Roman numeral in the legend corresponds to a specific sensor in Table I.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Flexible sensor array fabricated at , patterned by ink-jet digital lithography on PEN. (b) Cross-sectional view of a pixel showing the TFT and photodiode sensor. (c) An image captured by the flexible sensor array.

Tables

Generic image for table
Table I.

Comparison of photodiodes.

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/content/aip/journal/apl/91/6/10.1063/1.2767981
2007-08-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2767981
10.1063/1.2767981
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