Full text loading...
(a) Optical micrograph of a single-crystal rubrene transistor with channel length. (b) Output characteristics of the rubrene transistor recorded under various gate voltages from . (c) Transfer characteristics of a the short-channel transistor recorded under a fixed drain voltage of . The field-effect mobility evaluated in the saturation region of the drain current was . (d) Transfer characteristics of a long-channel rubrene transistor. The subthreshold slope is . The field-effect mobility and on/off ratio evaluated in the saturation region of the drain current were and , respectively.
(a) Transfer characteristics of the rubrene transistor having channel length under drain voltages of and . (b) The drain current of the transistor as a function of the drain voltage under large negative gate voltages. (c) The drain current vs the square of the drain voltage under low gate voltages.
(a) Threshold voltage shifts of long- and short-channel rubrene transistors under continuous gate stresses as a function of time. The channel lengths of both devices are and . (b) Half-life periods of long- and short-channel rubrene transistors as a function of accumulated charge density. The ’s were estimated by extrapolation of the results obtained in the measurements.
Summary of the bias-stress effect on long-channel and short-channel rubrene transistors at various stress biases. denotes the thickness of the gate dielectric for each device.
Article metrics loading...