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Reduction of mosaic spread using iridium interlayers: A route to improved oxide heteroepitaxy on silicon
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Image of FIG. 1.
FIG. 1.

scans of two -thick iridium films deposited on an MBE-grown buffer layer on Si(001). Iridium deposition rate: (a) and (b) for the first . Intensity ratio I(Ir 200)/I(Ir 111): (a) 0.03 and (b) 2100.

Image of FIG. 2.
FIG. 2.

Rocking curves and azimuthal scans of the iridium overlayer and the buffer layer of the epitaxial heterostructure (sample 2 in Table I).

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image of an sample taken along the [110] zone axis.

Image of FIG. 4.
FIG. 4.

(a) Mosaic spread FWHM of a MBE-grown buffer layer and a PLD-grown overlayer. On the left half of the sample the overlayer was deposited directly on top of the buffer layer. On the right half, the overlayer was deposited on a thick epitaxial iridium interlayer. (b) TEM images of the epitaxial heterostructure (sample 6) taken along the [110] zone axis.


Generic image for table
Table I.

Mosaic spread (FWHM values) for the different epitaxial heterostructures discussed. The angular resolution of the used XRD setup (Ref. 17) was better than 0.05°. The twist values were deduced from azimuthal scans under consideration of the broadening contribution due to the tilt (Ref. 21). In systems 1–8 all layers besides on Si(001) (rotated by 45°, see Ref. 13) and YSZ on Si(111) (rotation by 60°) grow in a cube-on-cube registry. Sample 9: ; sample 10: .


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Scitation: Reduction of mosaic spread using iridium interlayers: A route to improved oxide heteroepitaxy on silicon