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XAES spectra around Auger transitions from a sample in the as-implanted state, which was implanted with ions to a fluence of . The sputtering depth of each spectrum is indicated on the right-hand side of the figure. Each spectrum is shifted vertically for clarity. The energy positions of Zn, ZnO, and species are shown by dashed lines.
(a) Concentration profiles along the depth of Zn atoms existing as chemical forms of metallic Zn, ZnO, and plotted by solid, dotted, and dashed lines, respectively. (b) Depth profiles of Zn atoms in implanted with ions to a fluence of calculated by SRIM2003 and TRIDYN codes, plotted by dotted and solid lines, respectively.
(a) Concentration profiles of O, Si, and Zn atoms along the depth, determined by XAES and XPS. (b) Numerical ratio of O atoms to Si atoms in implanted with ions to a fluence of , plotted along the depth.
Numerical ratio of O atoms to Si atoms in implanted with ions to a fluence of , calculated by TRIDYN code, plotted along the depth. The depth profile of the implanted Zn atoms is also shown.
Gibbs free energy changes of the formation reactions of at and extrapolated values to . The symbols (엯) and (×) represent allowed and forbidden reactions, respectively.
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