1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Implantation-induced nonequilibrium reaction between Zn ions of and target
Rent:
Rent this article for
USD
10.1063/1.2768004
/content/aip/journal/apl/91/6/10.1063/1.2768004
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768004

Figures

Image of FIG. 1.
FIG. 1.

XAES spectra around Auger transitions from a sample in the as-implanted state, which was implanted with ions to a fluence of . The sputtering depth of each spectrum is indicated on the right-hand side of the figure. Each spectrum is shifted vertically for clarity. The energy positions of Zn, ZnO, and species are shown by dashed lines.

Image of FIG. 2.
FIG. 2.

(a) Concentration profiles along the depth of Zn atoms existing as chemical forms of metallic Zn, ZnO, and plotted by solid, dotted, and dashed lines, respectively. (b) Depth profiles of Zn atoms in implanted with ions to a fluence of calculated by SRIM2003 and TRIDYN codes, plotted by dotted and solid lines, respectively.

Image of FIG. 3.
FIG. 3.

(a) Concentration profiles of O, Si, and Zn atoms along the depth, determined by XAES and XPS. (b) Numerical ratio of O atoms to Si atoms in implanted with ions to a fluence of , plotted along the depth.

Image of FIG. 4.
FIG. 4.

Numerical ratio of O atoms to Si atoms in implanted with ions to a fluence of , calculated by TRIDYN code, plotted along the depth. The depth profile of the implanted Zn atoms is also shown.

Tables

Generic image for table
Table I.

Gibbs free energy changes of the formation reactions of at and extrapolated values to . The symbols (엯) and (×) represent allowed and forbidden reactions, respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/91/6/10.1063/1.2768004
2007-08-07
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Implantation-induced nonequilibrium reaction between Zn ions of 60keV and SiO2 target
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768004
10.1063/1.2768004
SEARCH_EXPAND_ITEM