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Reduction of microtwin defects for high-electron-mobility InSb quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

Plan-view TEM images taken from the same area of an InSb QW specimen under (a) a BF condition with the 220 spot of a parent region and (b) a DF condition with the spot of (111) MTs. The position of spot is indicated in Fig. 2(f).

Image of FIG. 2.
FIG. 2.

(Color online) [(a)–(d)] SAED patterns and [(e)–(h)] schematics for an area that consists of (a) and (e): parent; (b): parent and MT; (c) and (g): parent and (111) MT; (d) and (h): parent and both (111) and MTs; and (f): (111) MT regions in an InSb QW specimen. For clarity, the contrast of the SAED patterns has been inverted. The schematics have been drawn based on SAED simulations calculated with a commercial program MACTEMPAS. In the schematics, reflection spots derived from parent, (111) MT, and MT regions are represented by (blue) circles, (red) squares, and (green) triangles, respectively. Among them, spots emerged due to single and double diffractions are denoted by filled and open symbols, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) Stereo pair of three-dimensional (3D) graphs for RT electron mobilities in InSb QWs as functions of TD and MT densities. Darker (green) and lighter (yellow) circles show the data points for -thick QW samples grown on on-axis and 2° off-axis GaAs (001) substrates, respectively. Black (red) circle represents the data plot of the QW sample grown on a 2° off-axis GaAs (001) substrate. By looking at the right and left graphs with the corresponding eyes, one can perceive the graphs in a 3D space. Putting a piece of paper vertically between the graphs may help to see the 3D image.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduction of microtwin defects for high-electron-mobility InSb quantum wells