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High-performance thin film transistors from semiconducting liquid crystalline phases by solution processes
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10.1063/1.2768307
/content/aip/journal/apl/91/6/10.1063/1.2768307
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768307

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Polarized optical microscopy at RT for the film of 3-TTPPh-5 spin coated on the glass slide. The upper side shows the molecular structure of 3-TTPPh-5.

Image of FIG. 2.
FIG. 2.

(Color online) X-ray diffraction pattern of 3-TTPPh-5 film measured in the out-of-plane configuration (a) and in an in-plane setup (b). The inset shows the scheme of molecular stacking in the LC film.

Image of FIG. 3.
FIG. 3.

Output characteristics of the TFT of 3-TTPPh-5 on the HMDS-treated surface. The film was annealed at in vacuum before vacuum deposition of Au electrodes.

Image of FIG. 4.
FIG. 4.

Transfer characteristics of the TFTs of 3-TTPPh-5 built on the surface treated by different silane agents.

Tables

Generic image for table
Table I.

Modified surface with various silane agents and the performance of LC FETs built on the corresponding surfaces.

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/content/aip/journal/apl/91/6/10.1063/1.2768307
2007-08-09
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance thin film transistors from semiconducting liquid crystalline phases by solution processes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768307
10.1063/1.2768307
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