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Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation
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10.1063/1.2768637
/content/aip/journal/apl/91/6/10.1063/1.2768637
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768637
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the fabricated nanowire FETs and cross-sectional images of nanowires after the oxidation; (b) after of oxidation and (c) after of oxidation. The scale bars in the images denote .

Image of FIG. 2.
FIG. 2.

characteristics of (a) sample A, (b) sample B, and (c) sample C. The slope of (dashed line) indicates . The values of is plotted (c) as a function of oxidation conditions; gray dots denote the raw data of and solid triangles with a dashed line denote the average values of in each .

Image of FIG. 3.
FIG. 3.

Raman spectra of nanowires using radiation. (a) Dependence of Raman shift on oxidation conditions . Raw data (small gray dots) and average values (large gray dots with solid line) are plotted. (b) Comparison between the Raman spectra of samples A (gray dashed line), B (black solid line), and C (black dashed line) and Cz Si (gray line) .

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/content/aip/journal/apl/91/6/10.1063/1.2768637
2007-08-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768637
10.1063/1.2768637
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