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(a) Schematic diagram of the fabricated nanowire FETs and cross-sectional images of nanowires after the oxidation; (b) after of oxidation and (c) after of oxidation. The scale bars in the images denote .
characteristics of (a) sample A, (b) sample B, and (c) sample C. The slope of (dashed line) indicates . The values of is plotted (c) as a function of oxidation conditions; gray dots denote the raw data of and solid triangles with a dashed line denote the average values of in each .
Raman spectra of nanowires using radiation. (a) Dependence of Raman shift on oxidation conditions . Raw data (small gray dots) and average values (large gray dots with solid line) are plotted. (b) Comparison between the Raman spectra of samples A (gray dashed line), B (black solid line), and C (black dashed line) and Cz Si (gray line) .
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