Full text loading...
(Color online) [(a) and (b)] Sketch of the conduction-band profiles in the channel along the dashed line in (e) for different bias voltages. (a) Discharging of surface states by tunneling into the channel. (b) Charging of surface states by thermionic emission from the channel. (c) Scheme of the different conditions considered in the surface charge algorithm. (d) Illustration of the relation existing among the activation energy of the surface states, the perpendicular electric field and the barrier width. (e) SSM geometry ( the channel width, the channel length, and the trench width).
(a) curves of SSMs with different . The inset shows a zoom of the reverse bias loop. (b) Average value of the surface charge in the sidewalls of the channel.
Profiles of electric potential along the channel for different bias conditions. The inset shows the characteristic in forward and reverse biases .
Influence of the (a) width and (b) length of the channel on the characteristic .
Article metrics loading...