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SEM micrographs of SiNWs fabricated by EMD process using (100) Si substrates. The inset shows the TEM micrograph of an independent SiNW and the corresponding SAD patterns.
(a) SEM and (b) TEM micrographs of UNCD nanoemitters fabricated on preseeded SiNWs by MPECVD process for . The inset in (b) shows the SAD patterns of UNCD films.
Typical NEXAFS and Raman (inset) spectra for UNCD nanoemitters.
Electron field emission properties and current density–field plots of SiNWs and UNCD nanoemitters, which were prepared on unseeded or preseeded SiNWs using the MPECVD process for (the insets are the corresponding Fowler-Nordheim plots).
Electron field emission properties of the SiNWs and UNCD nanoemitters.
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