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Parity effect in Al and Nb single electron transistors in a tunable environment
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10.1063/1.2768897
/content/aip/journal/apl/91/6/10.1063/1.2768897
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768897

Figures

Image of FIG. 1.
FIG. 1.

(a) Electron micrograph of a CPT with SQUID arrays and diagram of measurement circuit (left) and an enlarged image of the CPT island (right). (b) Current-voltage characteristics of two SQUID arrays around zero bias in sample Al-6 at for values of magnetic flux from zero to half flux quantum through each SQUID. Zero bias resistance of the arrays varies from up to in this case.

Image of FIG. 2.
FIG. 2.

Gate induced CPT voltage modulation of Al-6 sample at (a) at different bias currents at and (b) at different bath temperatures.

Image of FIG. 3.
FIG. 3.

Gate induced CPT voltage modulation of (a) sample Al-6 and (b) Nb-4 at different magnetic fields and at . Biasing point for both samples corresponds to supercurrent branch of characteristics. Zero bias resistance of the SQUID arrays is marked on the curves.

Tables

Generic image for table
Table I.

Parameters of the measured CPTs.

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/content/aip/journal/apl/91/6/10.1063/1.2768897
2007-08-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Parity effect in Al and Nb single electron transistors in a tunable environment
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768897
10.1063/1.2768897
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