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Correlation between the lattice parameter and the dielectric tunability in nonepitaxial thin films
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10.1063/1.2768898
/content/aip/journal/apl/91/6/10.1063/1.2768898
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768898

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Variation of BST lattice parameter as function of oxygen pressure (a), W-doping level (b), crystallization temperature (c), and Al content in W-doped BST films (d).

Image of FIG. 2.
FIG. 2.

(Color online) Correlation between the BST lattice parameter and the tunability measured at and for all sample sets described in the Table I. The theoretical in-plane tunability and the out of plane tunability calculated for epitaxial films are plotted in dash lines for comparison.

Tables

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Table I.

Description of sample sets. The variable parameters are the oxygen deposition pressure , the deposition temperature , the crystallization temperature , and the doping (W and Al). For each set, the variable parameter is underlined and footnotes indicate the chosen values.

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/content/aip/journal/apl/91/6/10.1063/1.2768898
2007-08-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between the lattice parameter and the dielectric tunability in nonepitaxial Ba0.5Sr0.5TiO3 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2768898
10.1063/1.2768898
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