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(Color online) LRI profiles recorded during the growth of the thin films on Si(100) at with (RP-MOCVD) and without (MOCVD) plasma. Arrows indicate the different “incubation times.”
(Color online) Grazing angle (0.5°) XRD spectra of thin films deposited on Si(100) with (RP-MOCVD) and without (MOCVD) plasma activation. Inset: dynamics of the development of preferential orientation (100) for RP-MOCVD films, as a function of film thickness. For MOCVD films, the ratio has been normalized to that typical of powders; for RP-MOCVD films, the ratio has also been normalized to that typical of powders
(Color online) Thickness dependence of surface roughness (root mean square, rms) for MOCVD films and RP-MOCVD films. The inset shows three-dimensional AFM images of grainy MOCVD films and RP-MOCVD films with columnar structure; vertical scale is for both samples.
Cross sectional FE-SEM image of a RP-MOCVD film showing the columnar structure. Image (b) on a cut side is also shown to better view the nanocolumns.
(Color online) Spectral dependence of the refractive index and the absorption coefficient of films deposited on Si(100) with RP-MOCVD and without (MOCVD) plasma activation.
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