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Plasma ehnancement of metalorganic chemical vapor deposition and properties of nanostructured thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) LRI profiles recorded during the growth of the thin films on Si(100) at with (RP-MOCVD) and without (MOCVD) plasma. Arrows indicate the different “incubation times.”

Image of FIG. 2.
FIG. 2.

(Color online) Grazing angle (0.5°) XRD spectra of thin films deposited on Si(100) with (RP-MOCVD) and without (MOCVD) plasma activation. Inset: dynamics of the development of preferential orientation (100) for RP-MOCVD films, as a function of film thickness. For MOCVD films, the ratio has been normalized to that typical of powders; for RP-MOCVD films, the ratio has also been normalized to that typical of powders

Image of FIG. 3.
FIG. 3.

(Color online) Thickness dependence of surface roughness (root mean square, rms) for MOCVD films and RP-MOCVD films. The inset shows three-dimensional AFM images of grainy MOCVD films and RP-MOCVD films with columnar structure; vertical scale is for both samples.

Image of FIG. 4.
FIG. 4.

Cross sectional FE-SEM image of a RP-MOCVD film showing the columnar structure. Image (b) on a cut side is also shown to better view the nanocolumns.

Image of FIG. 5.
FIG. 5.

(Color online) Spectral dependence of the refractive index and the absorption coefficient of films deposited on Si(100) with RP-MOCVD and without (MOCVD) plasma activation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma ehnancement of metalorganic chemical vapor deposition and properties of Er2O3 nanostructured thin films