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Identification of sub-band-gap absorption features at the interface via spectroscopic ellipsometry
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10.1063/1.2769389
/content/aip/journal/apl/91/6/10.1063/1.2769389
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769389
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Log scale plot of the imaginary part of the dielectric function, , for deposited on silicon and subject to three different annealing temperatures: (black solid line), (red dashed line), and (blue dotted line). Several absorption centers are present below the band gap and peaked at 2.9, 3.3, 3.4, 4.25, , and a stretch from . Inset: corresponding plot of the real part of the dielectric function, , for the annealed film with similar spectral features. The appearance of the spectral features at the same photon energies indicates that Kramers-Kronig consistency is preserved with the point-by-point data inversion method.

Image of FIG. 2.
FIG. 2.

(Color online) Imaginary part of the dielectric function for deposited on fused silica and subject to three different anneal temperatures: (black solid line), (red dashed line), and (blue dotted line). No specific absorption features are observed below the band gap indicating that the sub-band-gap features shown in Fig. 1 are associated with the silicon substrate or its interface with the dielectric.

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/content/aip/journal/apl/91/6/10.1063/1.2769389
2007-08-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identification of sub-band-gap absorption features at the HfO2∕Si(100) interface via spectroscopic ellipsometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769389
10.1063/1.2769389
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