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Annealing characteristics of electrically isolated InGaAsP devices
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10.1063/1.2769390
/content/aip/journal/apl/91/6/10.1063/1.2769390
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769390
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Figures

Image of FIG. 1.
FIG. 1.

Damage distribution resulting from multiple energy fluorine implants (30, 120, 250, and with , , , and , respectively) into InGaAsP layers as simulated using transport of ions in matter (TRIM) (Ref. 9). A combined damage distribution due to all multienergy implants is also shown.

Image of FIG. 2.
FIG. 2.

Damage distribution resulting from , fluorine implants into InGaAsP layers as simulated using transport of ions in matter (TRIM) (Ref. 9).

Image of FIG. 3.
FIG. 3.

Evolution of sheet resistivity as a function of postimplant annealing temperature for -type InGaAsP layers isolated by multiple energy fluorine implants at RT and .

Image of FIG. 4.
FIG. 4.

Evolution of sheet resistivity as a function of postimplant annealing temperature for -type InGaAsP layers isolated by single energy fluorine implants at RT and .

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/content/aip/journal/apl/91/6/10.1063/1.2769390
2007-08-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing characteristics of electrically isolated InGaAsP devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769390
10.1063/1.2769390
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