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Quasi-unipolar photodetection for enhanced optical saturation power and maximal bandwidth
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10.1063/1.2769395
/content/aip/journal/apl/91/6/10.1063/1.2769395
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769395
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Figures

Image of FIG. 1.
FIG. 1.

Partial electrical depletion of absorption material may be exploited to simultaneously (a) suppress contributions of holes to photocurrent and (b) reduce hole transit time.

Image of FIG. 2.
FIG. 2.

Scanning capacitance measurement at the edge of the -diffusion window confirms understanding of dopant penetration and spatial concentration gradient. The “halo” indicates a region of precise electrical compensation.

Image of FIG. 3.
FIG. 3.

Significant improvement in modulation bandwidth may be achieved through design of doping profiles for quasi-unipolar operation.

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/content/aip/journal/apl/91/6/10.1063/1.2769395
2007-08-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quasi-unipolar InGaAs∕InP photodetection for enhanced optical saturation power and maximal bandwidth
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769395
10.1063/1.2769395
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