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microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process
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10.1063/1.2769397
/content/aip/journal/apl/91/6/10.1063/1.2769397
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769397
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) SEM image of the LED material. (b) A cross-sectional diagram of a MCLED structure. (c) The real-color image of MCLED emission under an injection current of .

Image of FIG. 2.
FIG. 2.

SEM images of (a) the cross-sectional view of the calibration sample with etch stop layer grown by plasma-assisted MBE, (b) the etched surface of the calibration sample, (c) the etched surface of the MCLED sample using secondary electron imaging, and (d) using backscattered electron imaging.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Angle-resolved EL spectrum of the MCLED. (b) The normalized EL spectrum.

Image of FIG. 4.
FIG. 4.

(Color online) Theoretical light extraction efficiency of a MCLED as a function of the cavity thickness and the relative QW position from the GaN/air interface. 0 corresponds to the semiconductor-air interface and 1 corresponds to the semiconductor-metal interface. The experimental structure is also indicated on the map.

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/content/aip/journal/apl/91/6/10.1063/1.2769397
2007-08-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 2.5λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769397
10.1063/1.2769397
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