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Effect of Sn doping on the thermoelectric properties of ErNiSb-based -type half-Heusler compound
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10.1063/1.2769398
/content/aip/journal/apl/91/6/10.1063/1.2769398
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769398
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Powder x-ray diffraction patterns of polycrystalline samples of (, 0.01, 0.03, and 0.05).

Image of FIG. 2.
FIG. 2.

(Color online) Temperature dependence of the thermoelectric properties of (, 0.01, 0.03, and 0.05). (a) Electrical resistivity , (b) Seebeck coefficient , (c) power factor , (d) Hall carrier concentration , (e) Hall mobility , (f) thermal conductivity , and (g) dimensionless figure of merit .

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/content/aip/journal/apl/91/6/10.1063/1.2769398
2007-08-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of Sn doping on the thermoelectric properties of ErNiSb-based p-type half-Heusler compound
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/6/10.1063/1.2769398
10.1063/1.2769398
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