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Correlation between the temperature and the fractal dimension calculated by box counting methods (∗, ●, ▴, and × signs) and our wavelet based routine (∎ marker). Error bars are also plotted for the latter data.
Filling factors vs the threshold level for AuGe thin film on GaAs substrate at heating temperature of (fractal dimension ) plotted with solid line with mark ◇, ∗ and 엯 marks mean and filling factors, respectively. As a reference the diagrams of a hemisphere (dotted line), a power law function (solid line), an exponential peak (dash-dot line), and a Gaussian function (dashed line) are also shown.
Structural entropy in terms of the filling factor for the heat treated AuGe layer on GaAs(100) substrate. The limiting line, , is plotted with thick solid line. As a reference the localization maps of the Gaussian (dashed line), the exponential (dotted line), and a power law (dash-dot line) localization are also shown.
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