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Heat treatment parameters effecting the fractal dimensions of AuGe metallization on GaAs
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View: Figures


Image of FIG. 1.
FIG. 1.

Correlation between the temperature and the fractal dimension calculated by box counting methods (∗, ●, ▴, and × signs) and our wavelet based routine (∎ marker). Error bars are also plotted for the latter data.

Image of FIG. 2.
FIG. 2.

Filling factors vs the threshold level for AuGe thin film on GaAs substrate at heating temperature of (fractal dimension ) plotted with solid line with mark ◇, ∗ and 엯 marks mean and filling factors, respectively. As a reference the diagrams of a hemisphere (dotted line), a power law function (solid line), an exponential peak (dash-dot line), and a Gaussian function (dashed line) are also shown.

Image of FIG. 3.
FIG. 3.

Structural entropy in terms of the filling factor for the heat treated AuGe layer on GaAs(100) substrate. The limiting line, , is plotted with thick solid line. As a reference the localization maps of the Gaussian (dashed line), the exponential (dotted line), and a power law (dash-dot line) localization are also shown.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Heat treatment parameters effecting the fractal dimensions of AuGe metallization on GaAs