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Schematic diagram describing the origin of the photocurrent induced by the CPGE in the direction of the space. The right arrow is the transition from the first subband in the quantum well to the higher energy band originating from the conduction band of GaN. indicates the net current due to an imbalance of carriers.
(a) Schematic structure of the uniaxial strain equipment. , , and are the central deformation, thickness, and length of the sample, respectively, and (b) schematic diagram to describe the experimental setup for photogalvanic measurements. The big rectangle with a diagonal and the small rectangle are the laser and the quarter-wave plate, respectively.
Photogalvanic current in an heterostructure as a function of the phase angle for oblique incidence of the irradiation at room temperature. Short dashed and short doted curves show the CPGE and LPGE components, respectively.
Amplitude of the CPGE current in an heterostructure as a function of the uniaxial strain. The short dash line is fitted linearly.
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