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Circular photogalvanic effect of the two-dimensional electron gas in heterostructures under uniaxial strain
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10.1063/1.2768918
/content/aip/journal/apl/91/7/10.1063/1.2768918
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2768918
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram describing the origin of the photocurrent induced by the CPGE in the direction of the space. The right arrow is the transition from the first subband in the quantum well to the higher energy band originating from the conduction band of GaN. indicates the net current due to an imbalance of carriers.

Image of FIG. 2.
FIG. 2.

(a) Schematic structure of the uniaxial strain equipment. , , and are the central deformation, thickness, and length of the sample, respectively, and (b) schematic diagram to describe the experimental setup for photogalvanic measurements. The big rectangle with a diagonal and the small rectangle are the laser and the quarter-wave plate, respectively.

Image of FIG. 3.
FIG. 3.

Photogalvanic current in an heterostructure as a function of the phase angle for oblique incidence of the irradiation at room temperature. Short dashed and short doted curves show the CPGE and LPGE components, respectively.

Image of FIG. 4.
FIG. 4.

Amplitude of the CPGE current in an heterostructure as a function of the uniaxial strain. The short dash line is fitted linearly.

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/content/aip/journal/apl/91/7/10.1063/1.2768918
2007-08-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Circular photogalvanic effect of the two-dimensional electron gas in AlxGa1−xN∕GaN heterostructures under uniaxial strain
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2768918
10.1063/1.2768918
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