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Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin buffer
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10.1063/1.2769750
/content/aip/journal/apl/91/7/10.1063/1.2769750
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2769750
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of cross section of normal incidence photodiode. (b) Scanning electron micrograph of both round and square mesas of photodiodes. The round device has the ring-shaped contacts with ring width of . For the square device, the ring contacts were made by bias stitched around the device.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dark current against voltage curves of both the round- and square-shaped mesa photodiodes. (b) Dark current against mesa area of both round and square photodiodes. The red and blue curves are actual dark current data. The dashed curves are computed, vs area, according to Eq. (1) (also shown in the inset).

Image of FIG. 3.
FIG. 3.

(Color online) (a) characteristics of photocurrent for round- and square-mesa photodiodes for , , and optical wavelengths. (b) External quantum efficiencies vs applied reversed bias voltage for round- and square-mesa photodiodes measured at , , and wavelengths for various optical powers.

Image of FIG. 4.
FIG. 4.

(a) Temporal impulse response of round- and square-mesa photodiodes at and at reversed bias of . (b) Fast-Fourier transform of the temporal impulse response of photodiode. Inset: FWHM-pulse width against device types.

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/content/aip/journal/apl/91/7/10.1063/1.2769750
2007-08-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2769750
10.1063/1.2769750
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