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Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin buffer
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10.1063/1.2769750
/content/aip/journal/apl/91/7/10.1063/1.2769750
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2769750
/content/aip/journal/apl/91/7/10.1063/1.2769750
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/content/aip/journal/apl/91/7/10.1063/1.2769750
2007-08-13
2014-10-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2769750
10.1063/1.2769750
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