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Microwave resistivity in the normal state for ( sample 1) at . The dotted line is a numerical fit for the expression . In this graph, . inset: a schematic drawing of the experimental setup, consisting of a copper cavity loaded by a single crystal sapphire (1), with the sample (2) placed in close proximity on the top of a dielectric “hot finger” (3), movable by using a micrometer screw (4).
vs for sample 1 (엯) at . Data obtained for a Nb bulk sample at the same frequency are shown for comparison(▾). The hatched region indicates the sensitivity limit of the experimental setup. In the inset, vs is plotted below on a semilog scale for the same sample. The continuous line represents the exponential behavior predicted by the BCS theory with a strong coupling ratio .
is shown at various temperatures for sample 1 at . In the inset, the IMD power and the surface resistance at as a function of the power circulating in the cavity are plotted for comparison.
Nonlinear parameter (proportional to the IMD power) vs the reduced temperature for sample 2. Continuous and dashed line represents the temperature behavior for the nonlinear coefficient expected in the case of the standard -wave and -wave models respectively.
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