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Effect of edge roughness in graphene nanoribbon transistors
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10.1063/1.2769764
/content/aip/journal/apl/91/7/10.1063/1.2769764
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2769764
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Simulated device of a bottom gate Schottky barrier (SB) field-effect transistor (FET) and the middle of a mixed-edge graphene nanoribbon (M-GNR) structure as a channel material. The length of zigzag edge portion is , which is located at the middle of the GNR channel in the longitudinal direction. (b) characteristics for a perfect armchair-edge GNR (A-GNR) FET (dashed line) and a M-GNRFET (solid line) in a log scale and a linear scale. (c) Local density of states (LDOS): Energy-resolved DOS vs channel position at off state ( and ) and (d) at on state ( and ) for the M-GNRFET. In (c) and (d), and of a A-GNRFET are plotted with the solid lines, and the dashed lines are plotted by , where is the self-consistent electrostatic potential with M-GNR along the channel position and is the band gap of the A-GNR.

Image of FIG. 2.
FIG. 2.

(Color online) (a) One example of the atomistic configuration of an irregular-edge GNR (I-GNR) with a probability of edge irregularity . (b) LDOS of an I-GNR with (case 1). (c) LDOS of another I-GNR with (case 2). Because a random process generates the edges of simulated I-GNRs, different I-GNRs with different edge shapes are possible even with the same . (d) LDOS for an I-GNR with (case 3). Solid lines are and of the A-GNR.

Image of FIG. 3.
FIG. 3.

(Color online) characteristics for a perfect edge GNRFET and three I-GNRFETs (a) in a log scale and (b) in a linear scale. (c) LDOS at off state ( and ) and (d) at on state ( and ) for the case 1 I-GNRFET. In (c) and (d), the solid lines and the dashed lines are the same as explained in the Fig. 1 caption.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Energy-resolved current spectrum at off state ( and ) and (b) at on state ( and ) for the case 1 I-GNRFET. The solid lines are for the case 1 I-GNRFET and the dashed lines are for the perfect A-GNRFET.

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/content/aip/journal/apl/91/7/10.1063/1.2769764
2007-08-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of edge roughness in graphene nanoribbon transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2769764
10.1063/1.2769764
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