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(Color online) (a) Simulated device of a bottom gate Schottky barrier (SB) field-effect transistor (FET) and the middle of a mixed-edge graphene nanoribbon (M-GNR) structure as a channel material. The length of zigzag edge portion is , which is located at the middle of the GNR channel in the longitudinal direction. (b) characteristics for a perfect armchair-edge GNR (A-GNR) FET (dashed line) and a M-GNRFET (solid line) in a log scale and a linear scale. (c) Local density of states (LDOS): Energy-resolved DOS vs channel position at off state ( and ) and (d) at on state ( and ) for the M-GNRFET. In (c) and (d), and of a A-GNRFET are plotted with the solid lines, and the dashed lines are plotted by , where is the self-consistent electrostatic potential with M-GNR along the channel position and is the band gap of the A-GNR.
(Color online) (a) One example of the atomistic configuration of an irregular-edge GNR (I-GNR) with a probability of edge irregularity . (b) LDOS of an I-GNR with (case 1). (c) LDOS of another I-GNR with (case 2). Because a random process generates the edges of simulated I-GNRs, different I-GNRs with different edge shapes are possible even with the same . (d) LDOS for an I-GNR with (case 3). Solid lines are and of the A-GNR.
(Color online) characteristics for a perfect edge GNRFET and three I-GNRFETs (a) in a log scale and (b) in a linear scale. (c) LDOS at off state ( and ) and (d) at on state ( and ) for the case 1 I-GNRFET. In (c) and (d), the solid lines and the dashed lines are the same as explained in the Fig. 1 caption.
(Color online) (a) Energy-resolved current spectrum at off state ( and ) and (b) at on state ( and ) for the case 1 I-GNRFET. The solid lines are for the case 1 I-GNRFET and the dashed lines are for the perfect A-GNRFET.
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