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(a) PL spectra of films on Cu-treated Si layer and on (100) Si substrates. Samples were not post annealed. (b) Position of band peak as function of excitation power for films on Cu-treated Si layer.
PL intensity (●, 엯) and value (▴, ▵) of band of films as a function of Cu-treated Si layer’s thickness . All samples were annealed at for in argon atmosphere.
(a) Schematic of Si surface before deposition. “” is described as Cu-treated Si layer by Cu diffusion. (b) Cross-sectional TEM images for films deposited on Cu-treated Si layer. [(c) and (d)] SAD patterns of (c) area Z and (d) area X in (b). Diffraction spots correspond to reflections from zone axis of Si and  of . Spots indicated by dashed and solid white lines correspond to those for and Si.
-band peak intensities as a function of temperature for films on Cu-treated Si layer (●) and for epitaxial films on (100) Si substrate (▴). The former sample was not annealed, while the latter was annealed at for in argon atmosphere.
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