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photoluminescence from as-deposited film
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) PL spectra of films on Cu-treated Si layer and on (100) Si substrates. Samples were not post annealed. (b) Position of band peak as function of excitation power for films on Cu-treated Si layer.

Image of FIG. 2.
FIG. 2.

PL intensity (●, 엯) and value (▴, ▵) of band of films as a function of Cu-treated Si layer’s thickness . All samples were annealed at for in argon atmosphere.

Image of FIG. 3.
FIG. 3.

(a) Schematic of Si surface before deposition. “” is described as Cu-treated Si layer by Cu diffusion. (b) Cross-sectional TEM images for films deposited on Cu-treated Si layer. [(c) and (d)] SAD patterns of (c) area Z and (d) area X in (b). Diffraction spots correspond to reflections from zone axis of Si and [010] of . Spots indicated by dashed and solid white lines correspond to those for and Si.

Image of FIG. 4.
FIG. 4.

-band peak intensities as a function of temperature for films on Cu-treated Si layer (●) and for epitaxial films on (100) Si substrate (▴). The former sample was not annealed, while the latter was annealed at for in argon atmosphere.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 1.54μm photoluminescence from β-FeSi2 as-deposited film