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(a) Gas flow sequence used in pulse-flow growth. (b) Schematic layer structure of multilayer (ML)-AlN buffer on sapphire.
Schematic of structure of AlGaN-MQW deep-UV LED with emission wavelength of .
Cross-sectional TEM image of AlGaN-MQW deep-UV LED with emission wavelength of .
Electroluminescence (EL) spectra of AlGaN-MQW LEDs with wavelengths of 231, 237, 248, 255, and measured at room temperature (RT) with injection current of around .
Output power and EQE as functions of current for (a) 261 and (b) AlGaN-MQW LEDs measured under RT cw operation.
Designed values of Al composition of wells, buffer and barrier layers, and electron blocking layers (EBLs) used for AlGaN-MQW LEDs.
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