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AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
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10.1063/1.2770662
/content/aip/journal/apl/91/7/10.1063/1.2770662
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770662
/content/aip/journal/apl/91/7/10.1063/1.2770662
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/content/aip/journal/apl/91/7/10.1063/1.2770662
2007-08-13
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770662
10.1063/1.2770662
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