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AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
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10.1063/1.2770662
/content/aip/journal/apl/91/7/10.1063/1.2770662
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770662

Figures

Image of FIG. 1.
FIG. 1.

(a) Gas flow sequence used in pulse-flow growth. (b) Schematic layer structure of multilayer (ML)-AlN buffer on sapphire.

Image of FIG. 2.
FIG. 2.

Schematic of structure of AlGaN-MQW deep-UV LED with emission wavelength of .

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image of AlGaN-MQW deep-UV LED with emission wavelength of .

Image of FIG. 4.
FIG. 4.

Electroluminescence (EL) spectra of AlGaN-MQW LEDs with wavelengths of 231, 237, 248, 255, and measured at room temperature (RT) with injection current of around .

Image of FIG. 5.
FIG. 5.

Output power and EQE as functions of current for (a) 261 and (b) AlGaN-MQW LEDs measured under RT cw operation.

Tables

Generic image for table
Table I.

Designed values of Al composition of wells, buffer and barrier layers, and electron blocking layers (EBLs) used for AlGaN-MQW LEDs.

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/content/aip/journal/apl/91/7/10.1063/1.2770662
2007-08-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770662
10.1063/1.2770662
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